Liang-Yu Yen

Title: Inventor Profile: Liang-Yu Yen

Introduction

Liang-Yu Yen, an esteemed inventor based in Tainan, Taiwan, has made significant contributions to the field of semiconductor technology. With a total of three patents to his name, Yen's work primarily focuses on advanced FinFET structures, which are crucial for the evolution of modern transistor technology.

Latest Patents

Liang-Yu Yen's latest patents include innovative designs and methods related to FinFET technology. One of his notable patents, titled "FinFET," describes a FinFET that comprises a fin structure, a gate, a source-drain region, and an inter layer dielectric (ILD). This advanced setup features a gate that crosses over the fin structure, with the source-drain region integrated within the fin structure. Remarkably, the ILD is situated laterally adjacent to the gate and incorporates a dopant, where the concentration of the dopant adjacent to the gate is deliberately lower than that further away.

Another significant patent, "Method of Forming Gate and FinFET," outlines a systematic approach for forming a gate involving several steps. These steps include the formation of a dummy gate, the creation of an ILD adjacent to the dummy gate, and doping with a dopant. In this method, the surface dopant concentration of the dummy gate is strategically kept lower than that of the ILD. After these processes, the dummy gate is removed to create a cavity, which allows for the insertion of the actual gate.

Career Highlights

Liang-Yu Yen has had a notable career working with prestigious organizations in the semiconductor industry. He has been associated with the Taiwan Semiconductor Manufacturing Company Limited, where he played a critical role in semiconductor innovations. Additionally, he has contributed his expertise at the Institute for Information Industry, further enhancing his profile as a leading inventor in his field.

Collaborations

Throughout his career, Yen has collaborated with talented individuals, including his coworkers Yu-Ting Hsiao and Cheng-Ta Wu. These collaborations have likely fostered an environment of innovation, allowing them to push the boundaries of semiconductor technology together.

Conclusion

Liang-Yu Yen represents the pinnacle of innovation in the semiconductor sector. His patents on FinFET technology not only showcase his prowess as an inventor but also contribute to the advancement of the electronics industry. His dedication and collaborative spirit exemplify the importance of teamwork in achieving significant technological breakthroughs.