Taiwan Semiconductor Manufacturing Comp. Ltd.

Institute for Information Industry

Liang-Yu Yen

Cheng-Ta Wu

Ting-Chun Wang

Lun-Kuang Tan

Wei-Ming You

Tsung-Han Wu

Yu-Ting Hsiao

Chun-Che Chien

Yang-Han Lee

Yih-Guang Jan

Hsien-Wei Tseng

Chih-Yuan Lo

A FinFET includes a fin structure, a gate, a source-drain region and an inter layer dielectric (ILD). The gate crosses over the fin structure. The source-drain region is in the fin structure. The ILD is laterally adjacent to the gate and includes a dopant, in which a dopant concentration of the ILD adjacent to the gate is lower than a dopant concentration of the ILD away from the gate.

FinFET

A method of forming a gate includes: forming a dummy gate; forming an inter layer dielectric (ILD) laterally adjacent to the dummy gate; doping a dopant into the dummy gate and the ILD, in which a surface dopant concentration of the dummy gate is lower than a surface dopant concentration of the ILD; removing the dummy gate to form a cavity after doping the dopant into the dummy gate and the ILD; and forming the gate in the cavity.

Method of forming gate and finFET

A mobile apparatus, a base station, a direct communication system and a power control method thereof are provided. The direct communication system includes the mobile apparatus and the base station. The base station transmits a power measurement request message to the mobile apparatus. The mobile apparatus determines a power adjustment reference between the mobile apparatus and another mobile apparatus according to the power measurement request message. One of the mobile apparatus and the base station generates a power adjustment request message according to the power adjustment reference. The mobile apparatus adjusts a communication power with the another mobile apparatus according to the power adjustment request message.

Mobile apparatus, base station, direct communication system and power control method thereof

Growing community of inventors

Tainan, Taiwan

Liang-Yu Yen