Kaohsiung, Taiwan

Li-Yen Liang

This inventor holds 4 USPTO granted patents and 2 published patent applications. Top assignees: Macronix International Co., Ltd., Macronix International. Active years: 2023-2026.

USPTO Granted Patents = 4 

% Patents Active = 100.0

Average Co-Inventor Count = 1.4

ph-index = 1


Location History:

  • Kaohsiung, TW (2023)
  • Hsing-Chu, TW (2024)

Company Filing History:


Years Active: 2023-2026

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4 patents (USPTO):Explore Patents

Title: Innovations of Li-Yen Liang in Semiconductor Technology

Introduction

Li-Yen Liang is a prominent inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding three patents that showcase his innovative approach to device design and manufacturing.

Latest Patents

Li-Yen Liang's latest patents include a circuit structure, a semiconductor device, and a method of manufacturing the same. This semiconductor device is applicable in a three-dimensional AND flash memory device. It features a dielectric substrate that consists of a first region and a second region. The composite stack structure is positioned over the dielectric substrate in both regions. Additionally, a vertical pillar array is integrated within the composite stack structure in the first region, while a resistor is laterally adjacent to the vertical pillar array, extending below, through, and above the composite stack structure.

Another notable patent is for a 3D AND flash memory device, which comprises a gate stack structure, a channel pillar, first and second conductive pillars, a charge storage structure, and a protective cap. The gate stack structure is situated on a dielectric substrate and includes alternating gate layers and insulating layers. The channel pillar penetrates through the gate stack structure, while the first and second conductive pillars are located within the channel pillar and also penetrate through the gate stack structure. The charge storage structure is positioned between the gate layers and the sidewall of the channel pillar, and the protective cap covers the top surface of the channel pillar, isolating the conductive pillars from the top gate layer.

Career Highlights

Li-Yen Liang is currently employed at Macronix International Co., Ltd., where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in advancing memory device technology, particularly in the realm of 3D flash memory.

Collaborations

Li-Yen Liang collaborates with talented individuals such as Min-Feng Hung and Chia-Tze Huang, contributing to a dynamic and innovative work environment.

Conclusion

Li-Yen Liang's contributions to semiconductor technology through his patents reflect his dedication to innovation and excellence in the field. His work at Macronix International Co., Ltd. continues to influence the future of memory devices.

Profile summary based on public USPTO records.
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