This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2005.
Company Filing History:
Years Active: 2005
Title: The Innovative Contributions of Li-Shung Chen
Introduction
Li-Shung Chen is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His work focuses on improving the efficiency and uniformity of plasma etching processes, which are critical in semiconductor manufacturing.
Latest Patents
Li-Shung Chen holds a patent titled "Iteratively selective gas flow control and dynamic database to achieve CD uniformity." This innovative method compensates for critical dimension (CD) variations across a semiconductor process wafer surface during plasma etching. The patent outlines a process that includes providing a semiconductor wafer with photolithographically developed features, determining dimensional variations, and adjusting gas flow parameters in a plasma reactor to achieve a level process surface.
Career Highlights
Li-Shung Chen is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading player in the semiconductor industry. His work has contributed to advancements in manufacturing processes that enhance the quality and reliability of semiconductor devices.
Collaborations
Li-Shung Chen has collaborated with notable colleagues, including Li-Te S Lin and Huain-Jelin Lin, who is a woman. These collaborations have fostered a productive environment for innovation and development in semiconductor technologies.
Conclusion
Li-Shung Chen's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work continues to influence the efficiency of manufacturing processes in the industry.