Li-Shen Juhn

Title: Innovations by Li-Shen Juhn in Radiation Testing Technology.

Introduction

Li-Shen Juhn is a notable inventor based in Taoyuan Hsien, Taiwan. He has made significant contributions to the field of radiation testing, particularly in relation to synchronized dynamic random access memory (SDRAM). With a total of 2 patents, his work has advanced the understanding and testing of electronic components under radiation exposure.

Latest Patents

Li-Shen Juhn's latest patents include a method for testing radiation on SDRAM and a comprehensive radiation test system. The first patent describes a method where an irradiation controller irradiates the SDRAM, allowing for the calculation of its status before and after radiation tests. These tests include Single Event Upsets (SEU), micro latch-up, Single Event Latch-up (SEL), and get rapture tests. The second patent outlines a radiation test system that integrates a radiation test field and a radiation controller. This system records the flow of radiation particles and the results from the test component, while also controlling a radiation particle accelerator to ensure the test component is subjected to a cyclically varying radiation beam.

Career Highlights

Li-Shen Juhn is affiliated with the Chung Shan Institute of Science and Technology, where he has been instrumental in developing innovative testing methodologies. His expertise in radiation testing has positioned him as a key figure in the advancement of electronic component reliability.

Collaborations

Li-Shen Juhn has collaborated with notable colleagues, including Kuang-Shyr Wu and Maw-Ching Lin, who contribute to the research and development efforts at the institute.

Conclusion

Li-Shen Juhn's contributions to radiation testing technology reflect his commitment to enhancing the reliability of electronic components. His innovative patents serve as a testament to his expertise and dedication to the field.