The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2003
Filed:
Jun. 28, 2001
Applicant:
Inventors:
Li-Shen Juhn, Taoyuan Hsien, TW;
Kuang-Shyr Wu, Taoyuan Hsien, TW;
Maw-Ching Lin, Taoyuan Hsien, TW;
Assignee:
Chung-Shan Institute of Science and Technology, Taoyuan, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 3/1302 ; G01R 3/100 ; G01R 3/126 ; G21G 5/00 ; G11G 2/900 ;
U.S. Cl.
CPC ...
G01R 3/1302 ; G01R 3/100 ; G01R 3/126 ; G21G 5/00 ; G11G 2/900 ;
Abstract
A method for testing for radiation on a synchronized dynamic random access memory (SDRAM), wherein an irradiation controller irradiates the SDRAM. The status of the SDRAM after a radiation test are calculated. The radiation tests comprise SEU, micro latch-up, SEL and get rapture tests. From the radiation test, we can understand the condition of the SDRAM before and after the radiation test.
Juhn, Li-Shen. (2003). Method of testing radiation for a sdram (U.S. Patent No. 6642725). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6642725
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