Shanghai, China

Li He

USPTO Granted Patents = 4 

Average Co-Inventor Count = 4.8

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2017-2023

Loading Chart...
4 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Inventor Li He

Introduction

Li He is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of microelectronics, particularly in the development of methods for manufacturing and optimizing storage devices. With a total of 4 patents, his work has had a substantial impact on the industry.

Latest Patents

One of Li He's latest patents is a method for manufacturing shallow trench isolations. This innovation provides a substrate comprising a storage cell area and a peripheral area of a storage device. The method involves etching the upper part of the substrate of the storage cell area using a first etching process to form a first shallow trench, which is then filled with silicon oxide using a first deposition process. Additionally, the upper part of the substrate of the peripheral area is etched using a second etching process to form a second shallow trench, which is also filled with silicon oxide using a second deposition process. This method effectively avoids silicon dislocation defects in the peripheral area, ensuring the device shape and characteristic dimensions of the storage cell area.

Another notable patent is a method for optimizing a critical dimension for double patterning for NAND flash. This invention involves forming a core oxide layer on an amorphous silicon layer on a substrate, densifying the core oxide layer, and etching it to create a core pattern. By measuring the critical dimension (CD) values of the core pattern, the method calculates the thickness of the core oxide layer required to be densified, allowing for precise control over the morphology and CD. This results in a double-patterned target pattern with consistent CD sizes and improved product yield.

Career Highlights

Li He has worked with esteemed organizations such as the Chinese Academy of Sciences and Shanghai Huali Microelectronics Corporation. His experience in these institutions has allowed him to refine his skills and contribute to groundbreaking innovations in microelectronics.

Collaborations

Throughout his career, Li He has collaborated with notable colleagues, including Haomin Wang and Lingxiu Chen. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Li He's contributions to the field of microelectronics through his patents and collaborations highlight his role as a significant inventor. His innovative methods for manufacturing and optimizing storage devices continue to influence the industry and pave the way for future advancements.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…