Li-Han Lin

Title: Innovations of Li-Han Lin in Semiconductor Manufacturing

Introduction

Li-Han Lin is a prominent inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, holding a total of 9 patents. His work focuses on innovative methods that enhance the efficiency and effectiveness of semiconductor devices.

Latest Patents

Li-Han Lin's latest patents include a method for manufacturing a semiconductor device. This method involves forming a first insulating layer over a substrate, followed by a second insulating layer with an opening. A conductive line structure is then created within this opening, leading to the formation of a contact void. Additionally, a plasma oxide layer is conformally applied over the conductive line structure and the contact void, followed by a nitride capping layer. The introduction of nitrogen ions into the nitride capping layer and an etching back process culminate in a refilled contact void. Another notable patent involves semiconductor structures with deep trench capacitors, which include multiple layers and a trench capacitor that penetrates these layers, ensuring contact with the substrate.

Career Highlights

Li-Han Lin is currently employed at Nan Ya Technology Corporation, where he continues to innovate in semiconductor technology. His expertise and dedication have positioned him as a key figure in the industry.

Collaborations

Li-Han Lin collaborates with talented individuals such as Szu-Yu Hou and Jr-Chiuan Wang, contributing to a dynamic and innovative work environment.

Conclusion

Li-Han Lin's contributions to semiconductor manufacturing through his patents and collaborations highlight his importance in the field. His innovative methods are paving the way for advancements in technology and efficiency in semiconductor devices.