The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
May. 10, 2022
Nanya Technology Corporation, New Taipei, TW;
Li-Han Lin, Taoyuan, TW;
Jr-Chiuan Wang, New Taipei, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
A method for manufacturing a semiconductor structure including the following steps is provided. First, a first insulating layer with a conductive contact is formed over a substrate, and a second insulating layer having an opening is formed on the first insulating layer, wherein the opening corresponds to and exposes a top surface of the conductive contact. A conductive line structure is formed in the opening, wherein a contact void is formed between the second insulating layer and the conductive line structure, and then a plasma oxide layer is conformally deposited over the substrate. Then, a wet cleaning process is performed by using an aqueous solution containing negatively charged ions. A capping layer is formed on the plasma oxide layer, the capping layer filling the contact void, and an etching back process to remove the capping layer above the contact void.