Li-Cheng Chang

Title: Innovations of Li-Cheng Chang in Semiconductor Technology

Introduction

Li-Cheng Chang is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on innovative methods for manufacturing semiconductor devices, which are crucial for modern electronics.

Latest Patents

Li-Cheng Chang's latest patents include a method for manufacturing semiconductor devices. This method involves forming a channel layer and an active layer over a substrate, followed by the creation of a doped epitaxial layer. The process includes patterning these layers to form a fin structure, which is essential for enhancing device performance. Another notable patent describes a semiconductor device that features a substrate, a channel layer with a fin portion, and a gate electrode. This design allows for the formation of a two-dimensional electron gas (2DEG) in the channel layer, improving the efficiency of the device.

Career Highlights

Throughout his career, Li-Cheng Chang has worked with esteemed institutions such as National Taiwan University and Taiwan Semiconductor Manufacturing Company. His experience in these organizations has allowed him to develop and refine his innovative approaches to semiconductor manufacturing.

Collaborations

Li-Cheng Chang has collaborated with notable colleagues, including Chao-Hsin Wu and Cheng-Jia Dai. These partnerships have contributed to the advancement of semiconductor technologies and have fostered a collaborative environment for innovation.

Conclusion

Li-Cheng Chang's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced electronic devices.