The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Apr. 12, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Chao-Hsin Wu, Taipei, TW;
Li-Cheng Chang, Taipei, TW;
Cheng-Jia Dai, Taichung, TW;
Shun-Cheng Yang, Taoyuan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A semiconductor device includes a substrate, a channel layer, an active layer, and a gate electrode. The channel layer has a fin portion over the substrate. The active layer is over at least the fin portion of the channel layer. The active layer is configured to cause a two-dimensional electron gas (2DEG) to be formed in the channel layer along an interface between the channel layer and the active layer. The gate electrode is in contact with a sidewall of the fin portion of the channel layer.