Shun-Cheng Yang

Title: Shun-Cheng Yang: Innovator in Semiconductor Manufacturing

Introduction

Shun-Cheng Yang is a prominent inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, holding 2 patents that showcase his innovative methods and technologies. His work has had a substantial impact on the development of advanced semiconductor devices.

Latest Patents

Yang's latest patents include a method for manufacturing semiconductor devices. This method involves forming a channel layer and an active layer over a substrate, followed by the creation of a doped epitaxial layer. The process includes patterning these layers to form a fin structure and subsequently forming a gate electrode that establishes a Schottky barrier. Another notable patent is for a semiconductor device that features a substrate, channel layer, active layer, and gate electrode, designed to facilitate the formation of a two-dimensional electron gas (2DEG) in the channel layer.

Career Highlights

Throughout his career, Shun-Cheng Yang has worked with esteemed organizations such as Taiwan Semiconductor Manufacturing Company and National Taiwan University. His experience in these institutions has allowed him to refine his expertise in semiconductor technology and contribute to groundbreaking advancements in the field.

Collaborations

Yang has collaborated with notable colleagues, including Chao-Hsin Wu and Li-Cheng Chang. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas in semiconductor research.

Conclusion

Shun-Cheng Yang's contributions to semiconductor manufacturing highlight his role as a key innovator in the industry. His patents and collaborations reflect a commitment to advancing technology and improving semiconductor devices.