The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Jun. 01, 2017
National Taiwan University, Taipei, TW;
Chieh-Hsiung Kuan, Taipei, TW;
Chun Nien, Taipei, TW;
Wen-Sheng Su, Taipei, TW;
Li-Cheng Chang, Taipei, TW;
Cheng-Huan Chung, Taipei, TW;
Wei-Cheng Rao, Taipei, TW;
Hsiu-Yun Yeh, Taipei, TW;
Shao-Wen Chang, Taipei, TW;
Kuan-Yuan Shen, Taipei, TW;
Susumu Ono, Taipei, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
An electron-beam lithography method includes, computing and outputting a development time of a positive-tone electron-sensitive layer and a parameter recipe of an electron-beam device by using a pattern dimension simulation system, performing a low-temperature treatment to chill a developer solution, utilizing an electron-beam to irradiate an exposure region of the positive-tone electron-sensitive layer based on the parameter recipe, and utilizing the chilled developer solution to develop a development region of the positive-tone electron-sensitive layer based on the development time. The development region is present within the exposure region, and an area of the exposure region is smaller than that of the first portion. As a result, the electron-beam lithography method may control a dimension of a development pattern of the positive-tone electron-sensitive layer more accurately, and may also shrink a minimum dimension of the development pattern of the positive-tone electron-sensitive layer.