Lan Yang

Title: Lan Yang: Innovator in eBeam Technology

Introduction

Lan Yang is a prominent inventor based in Ballston Lake, NY (US). She has made significant contributions to the field of semiconductor technology, particularly in the development of advanced eBeam systems. With a total of 2 patents, her work focuses on enhancing device performance and manufacturing processes.

Latest Patents

One of her latest patents is titled "Device/health of line (HOL) aware eBeam based overlay (EBO OVL) structure." This patent describes a method for generating a device layout of an eBeam based overlay structure with a minimum design rule. The method includes simulating a worst-case process margin for the generated device layout, enabling a plurality of devices, and breaking design rules to create an OVL measurement layout.

Another notable patent is "Fet structure for minimum size length/width devices for performance boost and mismatch reduction." This invention outlines methods for preparing CMOS transistors with longer effective gate lengths. The process involves forming a dummy gate, removing it to create a trench, modifying the substrate, and depositing a conformal high-k dielectric layer.

Career Highlights

Lan Yang is currently employed at GlobalFoundries Inc., where she continues to innovate in the semiconductor industry. Her work has been instrumental in advancing eBeam technology and improving device performance.

Collaborations

She has collaborated with notable colleagues, including Hongliang Shen and Guoxiang Ning, contributing to various projects and research initiatives.

Conclusion

Lan Yang's contributions to eBeam technology and semiconductor innovation are noteworthy. Her patents reflect her commitment to enhancing device performance and manufacturing processes. Her work continues to influence the industry positively.