The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Jan. 30, 2015
Globalfoundries Inc., Grand Cayman, KY;
Qin Wang, Ballston Spa, NY (US);
Min-hwa Chi, Malta, NY (US);
Meixiong Zhao, Ballston Lake, NY (US);
Zhaoxu Shen, Clifton Park, NY (US);
Haiting Wang, Clifton Park, NY (US);
Lucas M. Salazar, Malta, NY (US);
Lan Yang, Ballston Lake, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Methods for preparing CMOS transistors having longer effective gate lengths and the resulting devices are disclosed. Embodiments include forming a dummy gate bound by spacers on opposing sides thereof, on a substrate; removing the dummy gate to form a trench between the spacers; modifying a gate channel portion of the substrate between the spacers to form inner or outer sidewalls; depositing a conformal high-k dielectric layer on the modified gate channel portion; and forming a metal gate in the trench.