Placitas, NM, United States of America

L John Otten, Iii


Average Co-Inventor Count = 1.5

ph-index = 2

Forward Citations = 57(Granted Patents)


Company Filing History:


Years Active: 2001-2009

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4 patents (USPTO):Explore Patents

Title: L John Otten, III: Innovator in Diagnostic and Imaging Technologies

Introduction

L John Otten, III is a notable inventor based in Placitas, NM (US). He has made significant contributions to the fields of diagnostic methods and imaging technologies. With a total of 4 patents to his name, Otten's work has advanced the understanding and application of directed energy and retinal imaging.

Latest Patents

Otten's latest patents include innovative technologies such as diagnostic methods and apparatus for directed energy applications. This invention focuses on determining relationships between a laser beam and an object, which involves directing the beam onto the object, collecting reflected radiation, and analyzing the resulting image to adjust beam parameters. Another significant patent is the high-resolution, multispectral, wide field of view retinal imager. This ophthalmic instrument is designed to obtain high-resolution, wide-field multi-spectral retinal images, incorporating advanced optics and wavefront compensation to enhance image quality.

Career Highlights

Throughout his career, Otten has worked with various companies, including Kestrel Corporation. His expertise in diagnostic and imaging technologies has positioned him as a key figure in the development of innovative solutions in these fields.

Collaborations

Otten has collaborated with notable individuals such as Alexis Kudryashov and Andrey Viktorocvich Larichev. These collaborations have contributed to the advancement of his inventions and the overall progress in the technologies he specializes in.

Conclusion

L John Otten, III is a distinguished inventor whose work in diagnostic methods and imaging technologies has made a lasting impact. His innovative patents and collaborations reflect his commitment to advancing these critical fields.

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