Incheon, South Korea

KyungHwan Kim

USPTO Granted Patents = 3 

Average Co-Inventor Count = 4.2

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2023-2025

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3 patents (USPTO):Explore Patents

Title: Innovations by KyungHwan Kim in Semiconductor Manufacturing

Introduction

KyungHwan Kim is a notable inventor based in Incheon, South Korea. He has made significant contributions to the field of semiconductor manufacturing, holding a total of 3 patents. His work focuses on enhancing the efficiency and effectiveness of semiconductor devices.

Latest Patents

KyungHwan Kim's latest patents include a semiconductor manufacturing device and a method of enhancing a mold gate injector and air vent to reduce voids in encapsulant. This innovative device features a strip panel with multiple electrical components. The encapsulant is applied over these components using a mold gate injector, which directs the encapsulant in a path that increases flow resistance. This design allows for better control of the encapsulant application, reducing the likelihood of voids. Additionally, he has developed a selective EMI shielding method using a preformed mask, which improves the performance of semiconductor packages by ensuring that critical areas remain free of encapsulant and metal mask during the shielding process.

Career Highlights

KyungHwan Kim is currently employed at Stats Chippac Pte. Ltd., where he continues to innovate in semiconductor technology. His work has been instrumental in advancing manufacturing techniques that enhance product reliability and performance.

Collaborations

He has collaborated with notable coworkers, including HunTeak Lee and HeeSoo Lee, contributing to a dynamic team focused on semiconductor advancements.

Conclusion

KyungHwan Kim's contributions to semiconductor manufacturing demonstrate his commitment to innovation and excellence in the field. His patents reflect a deep understanding of the complexities involved in semiconductor technology, paving the way for future advancements.

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