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For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Kyeong-Han Lee

USPTO Granted Patents = 11 

Average Co-Inventor Count = 2.5

ph-index = 5

Forward Citations = 118(Granted Patents)


Location History:

  • Kyungki-do, KR (2005)
  • Gyeonggi-do, KR (2005 - 2016)
  • Suwon-si, KR (2009 - 2017)

Company Filing History:

goldMedal11 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2005-2017

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11 patents (USPTO):Explore Patents
1. 9715936 - Flash memory device for outputing data in synch with a first signal in an SDR mode and a DDR mode and a flash memory system including the same (2017-07-25),
2. 9368168 - Nonvolatile memory device including a peripheral circuit to receive an address in synch with one of a rising and falling edge of a signal regardless of whether a first or second alignment type is selected and nonvolatile memory system including the same (2016-06-14),
3. 9281072 - Flash memory device and flash memory system including the same (2016-03-08),
4. 8464087 - Flash memory devices with high data transmission rates and memory systems including such flash memory devices (2013-06-11),
5. 8286021 - Flash memory devices with high data transmission rates and memory systems including such flash memory devices (2012-10-09),
6. 8203890 - Data output buffer whose mode switches according to operation frequency and semiconductor memory device having the same (2012-06-19),
7. 7535773 - Data output buffer whose mode switches according to operation frequency and semiconductor memory device having the same (2009-05-19),
8. 7257028 - Temperature compensated bit-line precharge (2007-08-14),
9. 7064986 - Non-volatile semiconductor memory device using differential start programming voltage and programming method thereof (2006-06-20),
10. 6882570 - Power detecting circuit and method for stable power-on reading of flash memory device using the same (2005-04-19),
11. 6853585 - Flash memory device having uniform threshold voltage distribution and method for verifying same (2005-02-08),

Title: Kyeong-Han Lee: Innovator in Flash Memory Technology

Introduction

Kyeong-Han Lee is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of flash memory technology, holding a total of 11 patents. His work has been instrumental in advancing the efficiency and functionality of nonvolatile memory devices.

Latest Patents

Among his latest patents, Kyeong-Han Lee has developed a flash memory device designed for outputting data in synchronization with a first signal in both SDR and DDR modes. This innovative device includes a memory cell array, a signal generator that inputs a first data fetch signal and outputs a second data fetch signal, and an output buffer circuit that is configured to output data from the memory cell array in sync with the rising and falling edges of the second data fetch signal. Additionally, he has created a nonvolatile memory device that includes a peripheral circuit capable of receiving an address in sync with either the rising or falling edge of a signal, regardless of the alignment type selected.

Career Highlights

Kyeong-Han Lee is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of memory technology. His work has not only enhanced the performance of flash memory devices but has also contributed to the overall advancement of nonvolatile memory systems.

Collaborations

Throughout his career, Kyeong-Han Lee has collaborated with notable colleagues, including Young-Joon Choi and Seok-Cheon Kwon. These partnerships have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Kyeong-Han Lee's contributions to flash memory technology exemplify his dedication to innovation and excellence in the field. His patents and ongoing work at Samsung Electronics Co., Ltd. continue to shape the future of memory devices.

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