The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2016

Filed:

Sep. 16, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Kyeong-Han Lee, Gyeonggi-do, KR;

Seok-Cheon Kwon, Gyeonggi-do, KR;

Dong-Yang Lee, Gyeonggi-do, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); G11C 16/32 (2006.01); G11C 7/22 (2006.01); G11C 16/10 (2006.01); G11C 16/08 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 7/10 (2013.01); G11C 7/106 (2013.01); G11C 7/1051 (2013.01); G11C 7/1066 (2013.01); G11C 7/22 (2013.01); G11C 7/222 (2013.01); G11C 16/32 (2013.01); G11C 7/1018 (2013.01); G11C 16/08 (2013.01); G11C 16/102 (2013.01); G11C 16/26 (2013.01); G11C 2207/107 (2013.01); G11C 2207/2281 (2013.01);
Abstract

A flash memory device including: a memory cell array; a signal generator inputting a first data fetch signal and outputting a second data fetch signal; and an output buffer circuit configured to output data from the memory cell array in sync with rising and falling edges of the second data fetch signal, wherein second data fetch signal is output along with data output from the output buffer circuit.


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