Company Filing History:
Years Active: 2022-2025
Title: Kuo-Pi Tseng: Innovator in Semiconductor Technology
Introduction
Kuo-Pi Tseng is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of five patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.
Latest Patents
Among his latest patents is the "Optimized proximity profile for strained source/drain feature and method of fabricating thereof." This patent discloses source and drain formation techniques that provide FinFETs with reduced channel resistance and minimized drain-induced barrier lowering (DIBL). The exemplary three-step etch method for forming a source/drain recess includes a first anisotropic etch, an isotropic etch, and a second anisotropic etch. The process is designed to define the location of a source/drain tip, ensuring that the source/drain recess is filled with an epitaxial semiconductor material. Another notable patent is the "Semiconductor device and manufacturing method thereof," which describes a device comprising a substrate, a channel layer, a gate structure, and source/drain epitaxial structures.
Career Highlights
Kuo-Pi Tseng is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to innovate in semiconductor manufacturing processes. His expertise in the field has led to advancements that improve device performance and reliability.
Collaborations
He has collaborated with notable colleagues, including Chun-An Lin and Tzu-Chieh Su, contributing to various projects that enhance semiconductor technology.
Conclusion
Kuo-Pi Tseng's work in semiconductor technology exemplifies the innovative spirit of modern inventors. His patents reflect a commitment to advancing the field and improving the efficiency of semiconductor devices.