Taichung, Taiwan

Kuo-Hua Tseng

This inventor holds 1 USPTO granted patent. Top assignee: Siliconware Precision Industries, Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kuo-Hua Tseng. Retrieved from https://idiyas.com/inventor/kuo-hua-tseng-vzfg97no

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Kuo-Hua Tseng: Electronic Packaging Innovation

Introduction

Kuo-Hua Tseng is an inventor associated with Taichung, Taiwan, and Siliconware Precision Industries, Ltd. His work includes an invention in electronic packaging that addresses component coverage, electrical connections, and substrate space.

Latest Patents

Tseng is credited with 1 patent: “Electronic Package and Manufacturing Method Thereof.” The invention describes an electronic component and conductors arranged on a substrate structure and covered by an encapsulation layer. A conductive layer is formed along the encapsulation layer’s side surfaces and contacts the conductors, which are bonding wires used in a wire-bonding process. By using these conductors in place of a conventional heat sink, the design can reduce the area occupied on the substrate structure.

Career Highlights

Tseng’s patent reflects an engineering approach to electronic packaging that integrates conductors with the encapsulation structure. The disclosed design aims to make more efficient use of substrate space while maintaining electrical connections.

Collaborations

Tseng’s listed coworkers include Yen-Yu Chu and Tsung-Yu Huang. His patent is associated with Siliconware Precision Industries, Ltd.

Conclusion

Kuo-Hua Tseng’s electronic-package invention focuses on replacing a conventional heat sink with conductors integrated into the package design, with the goal of reducing substrate area.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…