Zhongli, Taiwan

Kuo-Hua Chang

This inventor holds 1 USPTO granted patent. Top assignee: Advanced Semiconductor Engineering, Inc.. Active years: 2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kuo-Hua Chang. Retrieved from https://idiyas.com/inventor/kuo-hua-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 2009

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1 patent (USPTO):Explore Patents

Title: Kuo-Hua Chang: Innovator in Semiconductor Technology

Introduction

Kuo-Hua Chang is a notable inventor based in Zhongli, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods for forming metal bumps.

Latest Patents

Kuo-Hua Chang holds a patent for a "Method for forming metal bumps." This patent outlines a detailed process that includes supplying a substrate with multiple pads, forming a photoresist layer, and electroplating a metal layer. The method is designed to enhance the efficiency and effectiveness of semiconductor manufacturing.

Career Highlights

Kuo-Hua Chang is currently employed at Advanced Semiconductor Engineering, Inc., where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the methods used in the industry.

Collaborations

Kuo-Hua Chang has collaborated with notable colleagues such as Sheng-Ming Wang and Shuo-Hsun Chang. These collaborations have contributed to the development of innovative solutions in semiconductor technology.

Conclusion

Kuo-Hua Chang's contributions to the field of semiconductor technology through his patent and work at Advanced Semiconductor Engineering, Inc. highlight his role as a key innovator in the industry. His methods for forming metal bumps represent a significant advancement in semiconductor manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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