Kuo-Cheng Wu

Title: Kuo-Cheng Wu: Innovator in Semiconductor Technology

Introduction

Kuo-Cheng Wu is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on enhancing the efficiency and performance of semiconductor structures.

Latest Patents

Wu's latest patents include a semiconductor structure with a dielectric-sealed doped region. This innovation aims to substantially reduce leakage current by replacing the conventional junction between source/drain regions and the substrate material with a seal dielectric. The process involves forming trenches in the substrate, which are lined with a seal dielectric before being filled with semiconductor material. The trenches are preferably overfilled, and a chemical mechanical polishing (CMP) process is used to planarize the overfill material. An epitaxial layer can be grown atop the trenches after planarization, if desired.

Career Highlights

Kuo-Cheng Wu is currently employed at Taiwan Semiconductor Manufacturing Company Ltd., a leading firm in the semiconductor industry. His expertise and innovative approaches have positioned him as a key player in advancing semiconductor technologies.

Collaborations

Throughout his career, Wu has collaborated with notable colleagues, including Carlos H. Diaz and Huan-Tsung Huang. These partnerships have contributed to the development of cutting-edge semiconductor solutions.

Conclusion

Kuo-Cheng Wu's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence advancements in semiconductor structures, paving the way for future innovations.