Singapore, Singapore

Kum Woh Vincent Leong


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2007-2011

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2 patents (USPTO):

Title: **Kum Woh Vincent Leong: Innovator in Semiconductor Technology**

Introduction

Kum Woh Vincent Leong is a notable inventor based in Singapore, recognized for his contributions to semiconductor technology. With two patents to his name, he has developed innovative structures and methods that enhance the performance of transistors in integrated circuits.

Latest Patents

Among his groundbreaking work, Kum Woh Vincent Leong's latest patents focus on the "Structure and method to form source and drain regions over doped depletion regions." This innovative approach aims to reduce junction capacitance in source/drain regions of transistors. The method involves forming a gate structure on a conductive substrate and implanting ions of a second conductivity type to create a doped depletion region beneath the source/drain regions. This design reduces capacitance between the source/drain regions and substrate, thereby improving the efficiency and performance of the device.

Career Highlights

Kum Woh Vincent Leong has made significant strides in his career, working with prominent companies in the semiconductor industry. He has been associated with Chartered Semiconductor Manufacturing Ltd and Globalfoundries Singapore Pte. Ltd. Through these experiences, he has been able to refine his expertise and contribute to advanced semiconductor processes.

Collaborations

Throughout his career, Kum Woh Vincent Leong has collaborated with talented professionals, including his coworkers King Jien Chui and Francis Benistant. These partnerships have facilitated the exchange of ideas and innovations, contributing to the development of effective semiconductor solutions.

Conclusion

Kum Woh Vincent Leong exemplifies the spirit of innovation in the field of semiconductor technology. His patents not only reflect his technical prowess but also contribute to the advancement of modern transistor applications. His ongoing work promises further developments that will enhance the capabilities of electronic devices worldwide.

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