Taipei, Taiwan

Kuang-Ming Liao

This inventor holds 2 USPTO granted patents. Top assignee: Other. Active years: 2022-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kuang-Ming Liao. Retrieved from https://idiyas.com/inventor/kuang-ming-liao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:

goldMedal1 out of 834,570 
Other
 patents
where one patent can have more than one assignee

Years Active: 2022-2023

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2 patents (USPTO):Explore Patents

Title: Kuang-Ming Liao: Innovator in Power Semiconductor Technology

Introduction

Kuang-Ming Liao is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of power semiconductor technology, holding a total of 2 patents. His innovative designs focus on enhancing the efficiency and performance of power semiconductors.

Latest Patents

Liao's latest patents include advanced designs for power semiconductors. One of his patents describes a power semiconductor that features a gate, a source, a plurality of first long-strip source metal layers, a drain, and a plurality of second long-strip drain metal layers. The source is constructed with a first copper particle layer and a first metal layer that covers the bottom surface of the first copper particle layer. This design allows for effective bonding to the first long-strip source metal layer via a first metal pillar. The drain is similarly designed with a second copper particle layer and a second metal layer, bonded to the second long-strip drain metal layer through a second metal pillar. The thickness of both copper particle layers ranges from 5 to 100 micrometers, formed by plating and stacking large-grain copper.

Another patent by Liao presents a power semiconductor that includes a gate, a source, a silicon chip, and a drain. In this design, the source features a first copper particle layer that covers the upper surface of a first metal layer. The silicon chip is bonded to the lower surface of this metal layer, while the drain is connected to the lower surface of the silicon chip. Notably, the thickness of the first copper particle layer exceeds that of the first metal layer, ensuring optimal performance. All copper components utilized in this design are of large grain size, greater than 0.25 micrometers.

Career Highlights

Throughout his career, Kuang-Ming Liao has focused on developing innovative solutions in semiconductor technology. His work has been instrumental in advancing the capabilities of power semiconductors, making them more efficient and reliable for various applications.

Collaborations

Liao has collaborated with notable colleagues in his field, including Tso-Tung Ko and Brian Cinray Ko. These partnerships have contributed to the successful development of his patented technologies.

Conclusion

Kuang-Ming Liao is a distinguished inventor whose work in power semiconductor technology has led to significant advancements in the industry

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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