The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
Sep. 20, 2022
Tso-tung Ko, Taipei, TW;
Brian Cinray Ko, Taipei, TW;
Kuang-ming Liao, Taipei, TW;
Chen-yu Liao, Taipei, TW;
Tso-Tung Ko, Taipei, TW;
Brian Cinray Ko, Taipei, TW;
Kuang-Ming Liao, Taipei, TW;
Chen-Yu Liao, Taipei, TW;
Abstract
A power semiconductor including a gate, a source, a plurality of first long-strip source metal layer, a drain and a plurality of second long-strip drain metal layer is provided. The source includes a first copper particle layer and a first metal layer that covers the bottom surface of the first copper particle layer. The source is bonded to the first long-strip source metal layer via a first metal pillar. The drain includes a second copper particle layer and a second metal layer that covers the bottom surface of the second copper particle layer. The drain is bonded to the second long-strip drain metal layer via a second metal pillar. The thickness of the first copper particle layer and the second copper particle layer are 5 μm˜100 μm. The first copper particle layer and the second copper particle layer are formed by plating and stacking a plurality of large-grain copper.