The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2022
Filed:
Apr. 22, 2020
Tso-tung Ko, Taipei, TW;
Brian Cinray Ko, Taipei, TW;
Kuang-ming Liao, Taipei, TW;
Chen-yu Liao, Taipei, TW;
Tso-Tung Ko, Taipei, TW;
Brian Cinray Ko, Taipei, TW;
Kuang-Ming Liao, Taipei, TW;
Chen-Yu Liao, Taipei, TW;
Other;
Abstract
A power semiconductor is provided. The power semiconductor includes a gate, a source, a silicon chip and a drain. The source includes a first copper particle layer and a first metal layer. The first copper particle layer covers the upper surface of the first metal layer. The silicon chip is bonded to the lower surface of the first metal layer. The drain is bonded to the lower surface of the silicon chip. The thickness of the first copper particle layer is greater than the thickness of the first metal layer. All copper mentioned are of large grain copper with size greater than 0.25 um.