Kudamatsu, Japan

Kouichi Nakaune

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi-High-Technologies Corporation. Active years: 2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kouichi Nakaune. Retrieved from https://idiyas.com/inventor/kouichi-nakaune

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: Kouichi Nakaune: Innovator in LSI Device Etching Technology

Introduction

Kouichi Nakaune is a notable inventor based in Kudamatsu, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the etching methods used for large-scale integration (LSI) devices. His innovative work has led to advancements that enhance the efficiency and effectiveness of semiconductor manufacturing processes.

Latest Patents

Kouichi Nakaune holds a patent for an "LSI device etching method and apparatus thereof." This invention involves an apparatus designed for plasma-etching LSI devices that include copper interconnections, low-k films, and diffusion prevention films. The apparatus features a treatment chamber where etching gas is introduced, along with a support table equipped with electrodes for placing the LSI device. By supplying radio frequency power to the electrodes, the etching gases are converted into plasma, allowing the LSI device to be etched with ions from the plasma. Notably, a mixture of sulfur-containing and fluorine-containing gases is used to selectively etch the diffusion prevention film against the low-k film.

Career Highlights

Kouichi Nakaune is associated with Hitachi High-Technologies Corporation, where he has been instrumental in developing advanced technologies for semiconductor manufacturing. His expertise in plasma etching has positioned him as a key figure in the industry, contributing to the ongoing evolution of LSI device fabrication.

Collaborations

Throughout his career, Kouichi has collaborated with esteemed colleagues, including Hideyuki Kazumi and Tsuyoshi Yoshida. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas within the field.

Conclusion

Kouichi Nakaune's contributions to LSI device etching technology exemplify the impact of innovative thinking in the semiconductor industry. His patent and work at Hitachi High-Technologies Corporation highlight the importance of advancements in manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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