The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2005
Filed:
Feb. 19, 2004
Hideyuki Kazumi, Tokyo, JP;
Tsuyoshi Yoshida, Kudamatsu, JP;
Eiji Ikegami, Kudamatsu, JP;
Kouichi Nakaune, Kudamatsu, JP;
Masamichi Sakaguchi, Kudamatsu, JP;
Yasuyuki Miyamoto, Kudamatsu, JP;
Akihiro Sano, Tokyo, JP;
Hideyuki Kazumi, Tokyo, JP;
Tsuyoshi Yoshida, Kudamatsu, JP;
Eiji Ikegami, Kudamatsu, JP;
Kouichi Nakaune, Kudamatsu, JP;
Masamichi Sakaguchi, Kudamatsu, JP;
Yasuyuki Miyamoto, Kudamatsu, JP;
Akihiro Sano, Tokyo, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
An apparatus for performing a plasma-etching of a LSI device including a Cu interconnection, a low-k film, and a diffusion prevention film has a treatment chamber, into which an etching gas is introduced, and a support table which is equipped with electrodes and on which said LSI device is placed. In this apparatus, the etching gasses are turned into plasma by supplying radio frequency power to electrodes provided within the treatment chamber, so that the LSI device is etched with ions of the plasma. In this apparatus, a sulfur-containing gas and a fluorine-containing gas are mixed to the etching gasses, so that the diffusion prevention film is selectively etched against the low-k film.