Konomu Ohki is a prominent inventor based in Gunma, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on innovative methods for producing substrates that enhance the performance of semiconductor integrated circuits.

Latest Patents

Ohki's latest patents include a method for producing a substrate to achieve semiconductor integration. This method involves creating a SOI type bonded substrate with a void areal ratio approaching zero percent when heat treated at temperatures around 1250°C. The process includes superimposing a silicon single crystal wafer covered by a silicon polycrystal layer, which contains isolated silicon single crystal islands. The heat treatment conducted during this process ensures effective bonding between the wafer and the support material. Another notable patent is for a dielectrically isolated substrate, which comprises a composite structure of single-crystal silicon substrates bonded together. This substrate features vertically walled moats and squared islands, resulting from anisotropic etching.

Career Highlights

Konomu Ohki is currently employed at Shin-Etsu Handotai Co., Ltd., a leading company in the semiconductor industry. His innovative approaches have positioned him as a key figure in advancing semiconductor technology.

Collaborations

Ohki has collaborated with notable colleagues, including Masatake Katayama and Yutaka Ohta. Their combined expertise has contributed to the development of groundbreaking technologies in the semiconductor field.

Conclusion

Konomu Ohki's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His innovative methods continue to shape the future of semiconductor integration.

Profile summary based on public USPTO records.

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