The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 1994
Filed:
Mar. 02, 1993
Applicant:
Inventors:
Masatake Katayama, Takasaki, JP;
Makoto Sato, Maebashi, JP;
Yutaka Ohta, Annaka, JP;
Mitsuru Sugita, Fukushima, JP;
Konomu Ohki, Annaka, JP;
Assignee:
Shin-Etsu Handotui Co., Ltd., Chiyoda, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 63 ; 437 67 ; 437 62 ; 437 64 ; 437974 ; 148D / ; 148D / ;
Abstract
A dielectrically isolated substrate is comprised of a single-crystal silicon substrate or bond substrate and a single-crystal silicon substrate or base substrate bonded together into a composite structure. The bond substrate has a (110) plane as a main crystal plane and is provided with vertically walled moats and substantially squared islands positioned adjacent to the moats. The moats and islands result from anisotropic etching using a specific mask pattern. Also disclosed is a process for producing the composite structure.