Tokyo, Japan

Koki Ishimaki

This inventor holds 1 USPTO granted patent. Top assignee: Jsr Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Koki Ishimaki. Retrieved from https://idiyas.com/inventor/koki-ishimaki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Koki Ishimaki: Semiconductor Polishing Innovation

Introduction

Koki Ishimaki is an inventor associated with JSR Corporation in Tokyo, Japan. His patent work addresses chemical mechanical polishing, a process used in semiconductor manufacturing. The supplied information identifies 1 patent associated with him.

Latest Patents

Ishimaki’s patent, “Chemical Mechanical Polishing Composition and Polishing Method,” describes a composition intended to polish semiconductor substrates containing ruthenium while suppressing ruthenium corrosion and maintaining a stable polishing speed.

The composition includes abrasive grains, an acid or salt containing specified oxidizing anions, and hydrogen peroxide. The patent also specifies a ratio between the amount of the acid or its salt and the amount of hydrogen peroxide, with MB/MC ranging from 0.015 to 11.

Career Highlights

Ishimaki’s identified invention focuses on a technical challenge in semiconductor processing: balancing effective polishing with protection of ruthenium-containing materials. His work is associated with JSR Corporation, a company active in materials and technologies used in semiconductor manufacturing.

Collaborations

The supplied information names Shuhei Nakamura as Ishimaki’s coworker. No further details about their collaboration or shared projects were provided.

Conclusion

Koki Ishimaki’s identified patent contributes a specialized chemical mechanical polishing approach designed to support stable semiconductor processing while reducing ruthenium corrosion.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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