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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12742098 B1

PDFFull Text
Date of Patent:
Sep. 22, 2026

Filed:

Aug. 01, 2022

Chemical mechanical polishing composition and polishing method

Applicant:

Jsr Corporation, Tokyo, JP;

Inventors:

Koki Ishimaki, Tokyo, JP;

Shuhei Nakamura, Tokyo, JP;

Yasutaka Kamei, Tokyo, JP;

Kohei Nishimura, Tokyo, JP;

Assignee:

JSR CORPORATION, Tokyo, JP;

Attorney:

JCIPRNET

Primary Examiner:

Jiong-Ping Lu

Int. Cl.
CPC ...
C09G 1/02 (2006.01); B24B 1/00 (2006.01); B24B 37/00 (2012.01); B24B 37/04 (2012.01); C09G 1/00 (2006.01); C09G 1/04 (2006.01); C09G 1/06 (2006.01); C09K 3/14 (2006.01); C09K 13/06 (2006.01); H10P 52/00 (2026.01); H10P 52/40 (2026.01); H10W 20/00 (2026.01);
U.S. Cl.
CPC ...
C09G 1/02 (2013.01); B24B 1/00 (2013.01); B24B 37/00 (2013.01); B24B 37/044 (2013.01); C09G 1/00 (2013.01); C09G 1/04 (2013.01); C09G 1/06 (2013.01); C09K 3/1454 (2013.01); C09K 3/1463 (2013.01); C09K 13/06 (2013.01); H10P 52/00 (2026.01); H10P 52/402 (2026.01); H10P 52/403 (2026.01); H10W 20/062 (2026.01);
Abstract

The present invention provides a chemical mechanical polishing composition with which it is possible to suppress ruthenium corrosion and also perform chemical mechanical polishing of a semiconductor substrate containing ruthenium while maintaining a stable polishing speed. The composition for chemical mechanical polishing of the present invention contains: (A) abrasive grains; (B) an acid containing at least one anion selected from the group consisting of periodate ions (IO), hypochlorite ions (ClO), chlorite ions (ClO) and hypobromite ions (BrO) or a salt of said acid; and (C) hydrogen peroxide. MB/MC=0.015 to 11, where MB (mol/L) is the amount of the (B) acid or salt thereof and MC (mol/L) is the amount of hydrogen peroxide (C).

Find Patent Forward Citations

Ishimaki, Koki. (2026). Chemical mechanical polishing composition and polishing method (U.S. Patent No. 12742098). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12742098

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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