Amimachi, Japan

Koji Izunome

This inventor holds 4 USPTO granted patents. Top assignees: Research Development Corporation of Japan, Komatsu Electronic Metals Co., Ltd., Mitsubishi Materials Corporation. Active years: 1995-1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Koji Izunome. Retrieved from https://idiyas.com/inventor/koji-izunome-pcwxdyaq

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.3

ph-index = 2

Forward Citations = 13(Granted Patents)


Location History:

  • Ami-machi, Inashiki-gun, Ibaragi-ken, JP (1995)
  • Ami-machi, JP (1997 - 1998)

Company Filing History:


Years Active: 1995-1998

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4 patents (USPTO):Explore Patents

Title: Koji Izunome: Innovator in Silicon Crystal Growth

Introduction

Koji Izunome is a notable inventor based in Amimachi, Japan. He has made significant contributions to the field of silicon crystal growth, holding a total of 4 patents. His innovative approaches have advanced the understanding and techniques used in the production of high-quality silicon crystals.

Latest Patents

Izunome's latest patents focus on the growth of silicon crystals from a melt under specific conditions. One of his patents describes a method for growing silicon single crystals while managing extraordinary eddy flows in the melt. By analyzing the temperature distribution of the melt, he can determine the appropriate gas to add, such as nitrogen, xenon, or krypton, to maintain the desired flow conditions. This method ensures a uniform distribution of impurities and oxygen along the crystal growth direction, resulting in a high-quality single crystal.

Another patent details the growth of silicon single crystals with uniform impurity distribution. This process involves adding elements like gallium, antimony, or indium to the melt to stabilize temperature conditions and control eddy flows. The addition of boron or phosphorus further enhances the growth process, ensuring that the resulting silicon single crystal has a consistent impurity distribution both lengthwise and radially.

Career Highlights

Throughout his career, Koji Izunome has worked with prominent organizations, including the Research Development Corporation of Japan and Sumitomo Sitix Corporation. His work in these companies has allowed him to refine his techniques and contribute to advancements in silicon crystal technology.

Collaborations

Izunome has collaborated with notable colleagues such as Shigeyuki Kimura and Souroku Kawanishi. These partnerships have fostered innovation and have been instrumental in the development of new methodologies in the field.

Conclusion

Koji Izunome's contributions to silicon crystal growth have established him as a key figure in the field. His innovative patents and collaborative efforts continue to influence advancements in crystal technology, ensuring the production of high-quality silicon crystals for various applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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