The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 1998
Filed:
Mar. 22, 1996
Koji Izunome, Ami-machi, JP;
Souroku Kawanishi, Tsukuba, JP;
Shinji Togawa, Tsukuba, JP;
Atsushi Ikari, Tsukuba, JP;
Hitoshi Sasaki, Omiya, JP;
Shigeyuki Kimura, Tsukuba, JP;
Research Development Corporation of Japan, Saitama-ken, JP;
Sumitomo Sitix Corporation, Hyogo-ken, JP;
Toshiba Ceramics Co., Ltd., Tokyo, JP;
Nippon Steel Corporation, Tokyo, JP;
Komatsu Electronic Metals Co., Ltd., Kanagawa-ken, JP;
Mitsubishi Materials Corporation, Tokyo, JP;
Abstract
When a Si single crystal 8 is pulled up from a melt 6 received in a crucible 2, the state of eddy flows generated in the melt 6 is judged from the temperature distribution of the melt at the surface. According to the result of judgement, the gas, i.e. N.sub.2, Xe or Kr, which causes extraoridnary deviation in the density of a melt 6 is added to an atmospheric gas, so as to keep the eddy flows under unstabilized condition. The effect of said gas is typical in the case of crystal growth from the melt to which a dopant such as Ca, Sb, Al, As or In having the effect to suppress the extraordinary deviation in the density is added. Since the single crystal is pulled up from the melt held in the temperature-controlled condition at the surface, impurity distribution and oxygen distribution are made uniform along the direction of crystal growth. A single crystal obtained in this way has highly-stabilized quality.