Annaka, Japan

Koji Ebara

USPTO Granted Patents = 6 


Average Co-Inventor Count = 1.7

ph-index = 2

Forward Citations = 12(Granted Patents)


Company Filing History:


Years Active: 2003-2019

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6 patents (USPTO):Explore Patents

Title: Koji Ebara: Innovator in Silicon Wafer Manufacturing

Introduction

Koji Ebara is a prominent inventor based in Annaka, Japan, known for his significant contributions to the field of silicon wafer manufacturing. With a total of 6 patents to his name, Ebara has developed innovative methods that enhance the efficiency and quality of silicon substrates.

Latest Patents

Ebara's latest patents include a groundbreaking method for manufacturing silicon wafers. This method involves a heat treatment process that creates a denuded zone in the surface layer of the silicon wafer. The process consists of two main steps: the first rapid heat treatment, which occurs at temperatures of 1300°C or more, and a second rapid heat treatment that holds the wafer at a temperature between 1100°C and 1300°C. Another notable patent focuses on the manufacturing of silicon substrates, utilizing a rapid-heating and rapid-cooling apparatus to maintain high temperatures for a specific duration, followed by controlled cooling processes.

Career Highlights

Ebara has made significant strides in the semiconductor industry through his work at Shin-Etsu Handotai Co., Ltd. His innovative approaches have not only advanced manufacturing techniques but have also contributed to the overall improvement of silicon wafer quality.

Collaborations

Throughout his career, Ebara has collaborated with notable colleagues, including Tetsuya Oka and Hiroki Ose. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Koji Ebara's contributions to silicon wafer manufacturing exemplify the impact of innovation in technology. His patents reflect a commitment to advancing the semiconductor industry, making him a key figure in this field.

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