Hitachinaka, Japan

Koichiro Eguchi


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Koichiro Eguchi: Innovator in Semiconductor Technology

Introduction

Koichiro Eguchi is a prominent inventor based in Hitachinaka, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the area of memory interfaces. His innovative work has led to the development of a patent that addresses critical challenges in semiconductor device testing and manufacturing.

Latest Patents

Eguchi holds a patent for a semiconductor device, along with testing and manufacturing methods thereof. This invention facilitates an efficient timing test on a memory interface included in a semiconductor device, ensuring compliance with latency restrictions. The semiconductor device features a clock output terminal, a command terminal, a data terminal, and a data strobe terminal. Additionally, it includes a testing terminal that outputs a signal to initiate a test on the memory interface, separate from the command signal.

Career Highlights

Koichiro Eguchi is associated with Renesas Technology Corporation, where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in enhancing the performance and reliability of memory interfaces in semiconductor devices.

Collaborations

Eguchi collaborates with notable colleagues such as Kengo Imagawa and Masami Makuuchi. Their combined expertise contributes to the advancement of semiconductor technologies and the successful implementation of innovative solutions.

Conclusion

Koichiro Eguchi's contributions to semiconductor technology exemplify the impact of innovation in the industry. His patent for a semiconductor device showcases his commitment to improving memory interface testing and manufacturing methods. Through his work at Renesas Technology Corporation, he continues to influence the future of semiconductor advancements.

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