Atsugi, Japan

Kohki Hikosaka


Average Co-Inventor Count = 1.8

ph-index = 3

Forward Citations = 199(Granted Patents)


Location History:

  • Yokohama, JP (1984)
  • Atsugi, JP (1991 - 1997)

Company Filing History:


Years Active: 1984-1997

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4 patents (USPTO):Explore Patents

Title: Kohki Hikosaka: Innovator in Semiconductor Technology

Introduction

Kohki Hikosaka is a prominent inventor based in Atsugi, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on high-speed transistors that enhance the performance of electronic devices.

Latest Patents

Hikosaka's latest patents include a high-speed heterojunction transistor and a high electron mobility transistor. The high-speed heterojunction transistor features a first region for controlling current and a second region for receiving carriers that have passed through the first region. Notably, the energy level difference between the lowermost valley of energy and the upper valley of energy in the conduction band of the semiconductor material in the second region is greater than that of the first region. The high electron mobility transistor comprises a substrate and a channel layer made of an undoped first semiconductor material containing indium arsenide. This device includes a two-dimensional electron gas that serves as a scatter-free path for electrons, along with an electron supplying layer that forms a heterojunction interface with the channel layer.

Career Highlights

Kohki Hikosaka is currently employed at Fujitsu Corporation, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of high-speed electronic devices.

Collaborations

Hikosaka has collaborated with notable coworkers, including Yasutake Hirachi and Takashi Mimura. Their combined expertise has contributed to the development of cutting-edge semiconductor technologies.

Conclusion

Kohki Hikosaka is a key figure in the semiconductor industry, with a focus on high-speed transistors that push the boundaries of electronic performance. His contributions are vital to the ongoing evolution of technology in this field.

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