The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 1984
Filed:
Dec. 15, 1983
Applicant:
Inventors:
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; B05D / ; C23C / ;
U.S. Cl.
CPC ...
156643 ; 118 501 ; 118620 ; 118728 ; 134-1 ; 148175 ; 156345 ; 156646 ; 1566591 ; 156662 ; 156603 ; 156612 ; 156D / ; 156D / ; 2041 / ; 2041 / ; 204298 ; 427 87 ; 427 93 ; 427 94 ; 427307 ;
Abstract
MOlecular beam epitaxy (MBE) requires that the surface of a substrate on which a semiconductor layer is formed by MBE be clean. Physical etching damages the substrate, while usual chemical etching damages vacuum pumps and contaminates MBE apparatuses. Hydrogen plasma etching can clean a substrate without damaging a substrate and a vacuum pump and without contaminating an MBE apparatus. Further, by combining MBE with formation of a protective layer without breaking the vacuum used in MBE, diffusion of an impurity in the semiconductor layer formed by MBE can be greatly decreased during a subsequent high-temperature heat treatment.