The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 1991
Filed:
Oct. 04, 1990
Kohki Hikosaka, Atsugi, JP;
Yasutake Hirachi, Musashino, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A field effect transistor includes a semiconductor substrate, first and second semiconductor layers formed on the semiconductor substrate, and third semiconductor layers located between the first and second semiconductor layers. The third semiconductor layers have a forbidden band width narrower than those in the first and second semiconductor layers and form a quantum well. The third semiconductor layers include a doping layer such as planar-doping or high doping, and a channel is formed in the third semiconductor layers along the quantum well. The electrons supplied from the doped layer are confined by the quantum well and form a quasi-two-dimensional electron gas.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile