Kiyoshi Hisatomi

Title: Kiyoshi Hisatomi: Innovator in Semiconductor Technology

Introduction

Kiyoshi Hisatomi is a notable inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

His latest patents focus on semiconductor devices featuring insulation films with specific breakdown voltages. In his innovations, impurity diffusion layers are formed in a silicon substrate, serving as source and drain regions that are separated from each other. A gate insulation film, which is a silicon oxide film containing chlorine at a concentration between 1.times.10.sup.18 atoms/cm³ and 2.times.10.sup.20 atoms/cm³, is formed on the silicon substrate using low-pressure chemical vapor deposition (CVD). A polysilicon layer serves as the gate electrode, and an inter-level insulation film is created on the resultant structure. Contact holes are formed on each of the source and drain regions, allowing for the connection of drain and source electrodes through these holes.

Career Highlights

Kiyoshi Hisatomi has worked with prominent companies in the technology sector, including Toshiba Corporation and Tokyo Shibaura Electric Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Some of his notable coworkers include Yuuichi Mikata and Sakae Funo. Their collaboration has likely fostered an environment of innovation and creativity in their projects.

Conclusion

Kiyoshi Hisatomi's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the field. His work continues to influence advancements in semiconductor devices, showcasing the importance of innovation in technology.