Kiyohisa Ishibashi

Title: The Innovations of Kiyohisa Ishibashi

Introduction

Kiyohisa Ishibashi, an accomplished inventor based in Toyama, Japan, has made significant contributions to the field of semiconductor technology. With a strong portfolio that includes seven patents, Ishibashi is recognized for his innovative techniques in manufacturing semiconductor devices and substrate processing.

Latest Patents

Ishibashi's latest advancements include a method of manufacturing semiconductor devices, as well as substrate processing apparatus and recording mediums. His patented technique focuses on a process that involves forming a first film with a specific predetermined thickness over a substrate. This process is achieved by executing a first cycle multiple times, which consists of non-simultaneous operations. The first operation involves forming an oxynitride film by supplying a first film-forming gas, followed by changing the oxynitride film into a first oxide film through the application of an oxidizing gas.

Career Highlights

Throughout his career, Ishibashi has been associated with notable companies, including Kokusai Electric Corporation and Hitachi Kokusai Electric Inc. His work within these organizations has propelled advancements in semiconductor device fabrication, underscoring his expertise and dedication to innovation in this critical technology sector.

Collaborations

Kiyohisa Ishibashi has collaborated with talented coworkers such as Tsukasa Kamakura and Atsushi Moriya. These collaborations have fostered an environment of creative problem-solving and have led to significant advancements in their respective fields.

Conclusion

Kiyohisa Ishibashi is a distinguished inventor whose contributions to semiconductor technology continue to shape the landscape of electronics. Through his innovative patents and collaborations, he has demonstrated a commitment to advancing the field, reinforcing his status as a leading figure in the realm of inventions and technological advancements.