Kokusai Electric Corporation

Hitachi-Kokusai Electric Inc.

Kiyohisa Ishibashi

Tsukasa Kamakura

Atsushi Moriya

Takeo Hanashima

Ryota Kataoka

Kimihiko Nakatani

Takaaki Noda

Kiyohiko Maeda

Yasuhiro Inokuchi

Hiroaki Hiramatsu

Shingo Nohara

Takafumi Nitta

Yoshiaki Hashiba

There is provided a technique including: forming a first film containing first element and second element; and forming a second film adjacent to the first film and containing the first element and the second element being different in characteristics from the first film, wherein one of the first and second films is formed by performing a first cycle a predetermined number of times, the first cycle including performing: (a1) supplying a first precursor gas containing the first element; and (b1) supplying a first reaction gas containing the second element, and wherein the other of the first and second films is formed by performing a second cycle a predetermined number of times, the second cycle including performing: (a2) supplying a second precursor gas containing the first element and being higher in a thermal decomposition temperature than the first precursor gas; and (b2) supplying a second reaction gas containing the second element.

Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus

There is provided a technique that includes: forming a film on a substrate including a recess formed on a surface of the substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas to the substrate; and (b) supplying a reaction gas to the substrate, wherein in (a), the precursor gas is supplied to the substrate separately a plurality of times, and a processing condition under which the precursor gas is supplied for a first time is set to a processing condition under which self-decomposition of the precursor gas is capable of being more suppressed than a processing condition under which the precursor gas is supplied for at least one subsequent time after the first time.

Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique that includes: forming a first film to have a first predetermined film thickness over a substrate by performing a first cycle a first predetermined number of times, the first cycle including non-simultaneously performing: (a1) forming an oxynitride film by supplying a first film-forming gas to the substrate; and (a2) changing the oxynitride film into a first oxide film by supplying a first oxidizing gas to the substrate to oxidize the oxynitride film.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Method of processing substrate, substrate processing apparatus, recording medium, method of manufacturing semiconductor device

There is provided a technique that includes: forming an oxide film having a predetermined thickness on a surface of a substrate by performing a cycle a plurality of times, the cycle including non-simultaneously performing: (a) forming a nitride film by supplying a film-forming gas to the substrate; and (b) oxidizing and changing the nitride film into a first oxide film by supplying an oxidizing gas to the substrate, wherein a maximum distance from an interface between the nitride film formed in (a) and a base of the nitride film to a surface of the nitride film is set to 2 nm or more and 4 nm or less.

There is provided a technique having a process that includes forming a film, which contains a first element and a second element on a substrate by performing a cycle a predetermined number of times, the cycle sequentially performing: (a) supplying a first precursor gas containing the first element to the substrate in a process chamber; (b) supplying a second precursor gas, which contains the first element and has a pyrolysis temperature lower than a pyrolysis temperature of the first precursor gas, to the substrate; and (c) supplying a reaction gas, which contains the second element that is different from the first element, to the substrate.

A method of manufacturing a semiconductor device includes conveying a first substrate provided with an opposing surface having insulator regions and a semiconductor region exposed between the insulator regions and a second substrate provided with an insulator surface exposed toward the opposing surface of the first substrate, into a process chamber in a state that the second substrate is arranged in to face the opposing surface of the first substrate, and selectively forming a silicon-containing film with a flat surface at least on the semiconductor region of the opposing surface of the first substrate by heating an inside of the process chamber and supplying at least a silicon-containing gas and a chlorine-containing gas into the process chamber.

Method of manufacturing a semiconductor device and substrate processing apparatus

In a dry cleaning process, breakage of a gas supply pipe can be prevented, and maintenance efficiency can be increased. There is provided a method of manufacturing a semiconductor device, comprising: (a) loading a substrate into a process chamber; (b) forming a silicon film or a silicon compound film on the substrate loaded in the process chamber by supplying a raw-material gas to a gas supply pipe disposed in the process chamber to introduce the raw-material gas into the process chamber; (c) unloading the substrate from the process chamber; (d) heating an inside of the process chamber after unloading the substrate to generate a crack in a thin film formed inside the process chamber; (e) decreasing an inside temperature of the process chamber after carrying out the step (d) with the substrate unloaded from the process chamber; and (f) introducing a cleaning gas into the process chamber by supplying the cleaning gas to the gas supply pipe after the step (e) with the substrate unloaded from the process chamber.

Growing community of inventors

Toyama, Japan

Kiyohisa Ishibashi