The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
Jan. 08, 2021
Applicant:
Kokusai Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
KOKUSAI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0223 (2013.01); C23C 16/345 (2013.01); C23C 16/45529 (2013.01); C23C 16/56 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01);
Abstract
There is provided a technique that includes: forming an oxide film having a predetermined thickness on a surface of a substrate by performing a cycle a plurality of times, the cycle including non-simultaneously performing: (a) forming a nitride film by supplying a film-forming gas to the substrate; and (b) oxidizing and changing the nitride film into a first oxide film by supplying an oxidizing gas to the substrate, wherein a maximum distance from an interface between the nitride film formed in (a) and a base of the nitride film to a surface of the nitride film is set to 2 nm or more and 4 nm or less.