The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Aug. 30, 2023
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Takeo Hanashima, Toyama, JP;

Kiyohisa Ishibashi, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/44 (2006.01); C23C 16/46 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/345 (2013.01); C23C 16/4408 (2013.01); C23C 16/46 (2013.01); H01L 21/02167 (2013.01); H01L 21/0217 (2013.01); H01L 21/02211 (2013.01);
Abstract

There is provided a technique that includes: forming a film on a substrate including a recess formed on a surface of the substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas to the substrate; and (b) supplying a reaction gas to the substrate, wherein in (a), the precursor gas is supplied to the substrate separately a plurality of times, and a processing condition under which the precursor gas is supplied for a first time is set to a processing condition under which self-decomposition of the precursor gas is capable of being more suppressed than a processing condition under which the precursor gas is supplied for at least one subsequent time after the first time.


Find Patent Forward Citations

Loading…