Hong Kong, China

Kin On Johnny Sin

This inventor holds 2 USPTO granted patents. Top assignee: Other. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kin On Johnny Sin. Retrieved from https://idiyas.com/inventor/kin-on-johnny-sin-okta9ldu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:

goldMedal2 out of 834,570 
Other
 patents

Years Active: 2020

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Kin On Johnny Sin: Innovator in Power Semiconductor Technology

Introduction

Kin On Johnny Sin is a notable inventor based in Hong Kong, CN. He has made significant contributions to the field of power semiconductor devices, holding a total of 2 patents. His work focuses on enhancing the efficiency and performance of insulated-gate bipolar transistors (IGBTs).

Latest Patents

One of his latest patents is titled "Insulated-gate bipolar transistor structure and method for manufacturing the same." This invention provides a planar IGBT structure characterized by an ultra-thin channel and buried oxide located below the channel. The design aims to achieve the theoretically lowest on-state voltage drop, which is crucial for improving energy efficiency in electronic devices.

Another significant patent is "Reverse-conducting insulated-gate bipolar transistor structure and corresponding fabrication method thereof." This invention relates to a high-performance RC-IGBT structure that can be fabricated without a thin wafer process. The structure includes an emitter electrode, multiple cells, an n-drift region, and a collector electrode, among other components, all designed to enhance the performance of power semiconductor devices.

Career Highlights

Kin On Johnny Sin has established himself as a leading figure in the semiconductor industry. His innovative designs and methods have contributed to advancements in power electronics, making devices more efficient and reliable. His expertise in IGBT technology has positioned him as a valuable asset in the field.

Collaborations

Kin On Johnny Sin has worked alongside talented individuals such as Xianda Zhou and Ka Kit Wong. Their collaborative efforts have furthered the development of cutting-edge semiconductor technologies.

Conclusion

Kin On Johnny Sin's contributions to the field of power semiconductor technology are noteworthy. His innovative patents and collaborative work with other professionals highlight his commitment to advancing the industry. His inventions continue to pave the way for more efficient electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…