The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2020
Filed:
Jul. 11, 2016
Pui Sze Lau, Clear water bay, HK;
Pui Sze Lau, Clear water bay, HK;
Xianda Zhou, Clear water bay, HK;
Kin on johnny Sin, Clear water bay, HK;
Other;
Abstract
The present invention relates to a power semiconductor device structure and a fabrication process, and provides a high-performance RC-IGBT structure that can be fabricated without a thin wafer process. To achieve this objective, the present invention provides an RC-IGBT structure, including: an emitter electrode at the front surface; a plurality of cells under the emitter electrode; an ndrift region under the cells; a collector electrode located at the back surface; a plurality of trenches located at the back surface and being filled by the collector electrode; a mechanical support semiconductor region located between the trenches; a pcollector region located at the top of each trench and connected to the collector electrode; an n buffer region located on top of each pcollector region and below the ndrift region; and an ncathode region at the sidewall of each trench and connected to the collector electrode.