The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Jun. 29, 2016
Applicant:
Ka Kit Wong, Clear water bay, HK;
Inventors:
Xianda Zhou, Clear water bay, HK;
Ka Kit Wong, Clear water bay, HK;
Kin on johnny Sin, Clear water bay, HK;
Assignee:
Other;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7393 (2013.01); H01L 29/0623 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/0696 (2013.01); H01L 29/41708 (2013.01); H01L 29/66333 (2013.01); H01L 29/7395 (2013.01); H01L 29/1095 (2013.01);
Abstract
The present invention provides an insulated-gate bipolar transistor (IGBT) structure and a method for manufacturing the same. The structure is a planar IGBT structure, and is characterized by an ultra-thin channel and buried oxide located below the channel. The structure can provide the theoretically lowest on-state voltage drop.