Kiichi Hama

Title: Kiichi Hama: Innovator in Plasma Processing Technology

Introduction

Kiichi Hama is a notable inventor based in Nagano, Japan. He has made significant contributions to the field of plasma processing technology. His innovative approach has led to advancements in etching devices used in semiconductor manufacturing.

Latest Patents

Hama holds a patent for a method of plasma processing. This method involves etching an SiO film layer formed at a wafer placed inside a process chamber of an etching device. Plasma is generated from a process gas containing fluorocarbon, which is introduced into the process chamber. The contents of an etchant and the byproducts are measured through infrared laser absorption analysis. The measured contents are compared with the contents of the etchant and byproducts in the plasma, corresponding to the increase in the aspect ratio of a contact hole set in advance. The quantity of oxygen added into the process gas is adjusted to match the measured contents with predetermined contents. As the aspect ratio becomes higher, the quantity of oxygen added into the process gas is continuously increased. This results in the formation of a contact hole at the SiO film layer without damaging the photoresist film layer or inducing an etch stop. Hama has 1 patent to his name.

Career Highlights

Kiichi Hama has worked with Tokyo Electron Limited and Japan Science and Technology Corporation. His work has been instrumental in enhancing the efficiency and effectiveness of plasma processing techniques in the semiconductor industry.

Collaborations

Hama has collaborated with notable colleagues such as Hiroyuki Ishihara and Akinori Kitamura. Their combined expertise has contributed to the advancement of technologies in their field.

Conclusion

Kiichi Hama's innovative contributions to plasma processing technology have made a significant impact on the semiconductor industry. His work continues to influence advancements in etching devices and processes.