The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2007
Filed:
Dec. 21, 1999
Kiichi Hama, Nagano, JP;
Hiroyuki Ishihara, Yamanashi, JP;
Akinori Kitamura, Yamanashi, JP;
Abstract
An SiOfilm layer formed at a wafer placed inside a process chamber of an etching device is etched by generating plasma from a process gas containing fluorocarbon which has been introduced into the process chamber. The contents of an etchant and the byproducts are measured through infrared laser absorption analysis. The individual contents thus measured are compared with the contents of the etchant and the byproducts in the plasma corresponding to the increase in the aspect ratio of a contact hole set in advance. The quantity of Oadded into the process gas is adjusted to match the measured contents with the predetermined contents. The quantity of Oadded into the process gas is continuously increased as the aspect ratio becomes higher. As a result, a contact hole is formed at the SiOfilm layer without damaging the photoresist film layer or inducing an etch stop.